Manufacturer Product Number:
SQM120N10-3M8_GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SQM120N10-3M8_GE3-DG
Description:
MOSFET N-CH 100V 120A TO263
Detailed Description:
N-Channel 100 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2PAK)
Inventory:
300 Pcs New Original In Stock
12918176
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SQM120N10-3M8_GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
190 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7230 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SQM120
Datasheet & Documents
Datasheets
Additional Information
Other Names
SQM120N10-3M8_GE3DKR
SQM120N10-3M8_GE3-DG
SQM120N10-3M8_GE3CT
SQM120N10-3M8_GE3TR
Standard Package
800
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IPB049N08N5ATMA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
1859
DiGi PART NUMBER
IPB049N08N5ATMA1-DG
UNIT PRICE
0.92
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
BUK765R0-100E,118
MANUFACTURER
Nexperia USA Inc.
QUANTITY AVAILABLE
15619
DiGi PART NUMBER
BUK765R0-100E,118-DG
UNIT PRICE
1.73
SUBSTITUTE TYPE
Direct
DIGI Certification
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