Manufacturer Product Number:
SIHP17N80E-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SIHP17N80E-GE3-DG
Description:
MOSFET N-CH 800V 15A TO220AB
Detailed Description:
N-Channel 800 V 15A (Tc) 208W (Tc) Through Hole TO-220AB
Inventory:
1000 Pcs New Original In Stock
13010786
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
SIHP17N80E-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
E
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
290mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
122 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2408 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SIHP17
Datasheet & Documents
Datasheets
Additional Information
Other Names
SIHP17N80E-GE3-ND
742-SIHP17N80E-GE3
Standard Package
1,000
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
VP0300B-E3
MOSFET P-CH 30V 0.32A TO-205
SQM50034EL_GE3
MOSFET N-CH 60V 100A TO263
CSD17382F4T
MOSFET N-CH 30V 2.3A 3PICOSTAR
